SPD04N60S5 Infineon Technologies, SPD04N60S5 Datasheet - Page 8

• Manufacturer Part Number: SPD04N60S5
• Description: MOSFET N-CH 600V 4.5A TO-252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD04N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5.5V @ 200µA
• Gate Charge (qg) @ Vgs: 22.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000077612; SPD04N60S5; SPD04N60S5INTR; SPD04N60S5XT

13 Drain-source breakdown voltage
V
15 Typ. capacitances
C = f ( V
parameter: V
Rev. 2.5
(BR)DSS
pF
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
4
3
2
1
0
0
SPU04N60S5
DS
= f ( T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
oss
iss
300
60
100
400
°C
V
T
V
j
DS
180
600
Page 8
14 Avalanche power losses
P
parameter: E
16 Typ. C
E
AR
oss
µJ
W
200
150
125
100
= f ( V
= f ( f )
3.5
2.5
1.5
0.5
75
50
25
0
2
1
0
10
0
4
DS
oss
)
100
AR
stored energy
=0.4mJ
200
300
10
5
SPU04N60S5
SPD04N60S5
400
2008-04-08
Hz
V
f
V
DS
600
10
6