SPD04N60S5 Infineon Technologies, SPD04N60S5 Datasheet - Page 5

• Manufacturer Part Number: SPD04N60S5
• Description: MOSFET N-CH 600V 4.5A TO-252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD04N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5.5V @ 200µA
• Gate Charge (qg) @ Vgs: 22.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000077612; SPD04N60S5; SPD04N60S5INTR; SPD04N60S5XT

1 Power dissipation
P
3 Transient thermal impedance
Z
parameter: D = t
Rev. 2.5
thJC
tot
K/W
10
10
= f ( T
10
10
W
55
45
40
35
30
25
20
15
10
= f (t
-1
-2
5
0
1
0
10
0
SPU04N60S5
-5
C
p
20
)
)
40
10
p
-4
/T
60
80
10
-3
100
120
10
-2
°C
T
t
p
s
C
160
10
Page 5
-1
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f ( V
10
10
10
10
A
A
14
10
-1
-2
8
6
4
2
0
1
0
10
0
DS
0
DS
20V
12V
10V
); T
)
p
= 10 µs, V
5
j
=25°C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10
C
=25°C
GS
SPU04N60S5
SPD04N60S5
15
10
2008-04-08
2
V
9.5V
7.5V
6.5V
V
9V
8V
7V
V
V
8.5V
DS
DS
10
25
3