FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet
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Manufacturer Part Number
FDG332PZ
Description
MOSFET P-CH 20V 2.6A SC70-6
Manufacturer
Fairchild Semiconductor
Specifications of FDG332PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
95 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
Fairchild Semiconductor
Manufacturer:
FAIRCHILD/仙童
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDG332PZ
P-Channel PowerTrench
-20V, -2.6A, 97m
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
Max r
Max r
Max r
Max r
Very low level gate drive requirements allowing operation
in 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
, T
JA
JA
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
.2P
= 95m at V
= 115m at V
= 160m at V
= 330m at V
SC70-6
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
D
GS
GS
D
GS
GS
= -4.5V, I
Pin 1
= -2.5V, I
= -1.8V, I
= -1.5V, I
FDG332PZ
S
Device
-Continuous
-Pulsed
D
D
D
D
= -2.6A
= -2.2A
= -1.9A
= -1.0A
D
T
®
A
= 25°C unless otherwise noted
D
MOSFET
Parameter
G
Package
SC70-6
1
General Description
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench
battery power management applications.
Applications
Battery management
Load switch
Reel Size
7’’
D
D
G
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
®
process. It has been optimized for
Tape Width
8 mm
-55 to +150
Ratings
0.75
0.48
-2.6
170
260
-20
±8
-9
December 2008
www.fairchildsemi.com
D
D
S
Quantity
3000 units
Units
°C/W
°C
W
V
V
A
tm
Related parts for FDG332PZ
FDG332PZ Summary of contents
... JA R Thermal Resistance, Junction to Ambient Single operation JA Package Marking and Ordering Information Device Marking Device .2P FDG332PZ ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 ® MOSFET General Description This P-Channel MOSFET uses Fairchild’s advanced low = -2.6A D voltage PowerTrench = -2.2A D battery power management applications. ...
... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J Test Conditions I = -250 -250 A, referenced to 25°C ...
... Junction Temperature 9 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J 2.5 = -3V 2 -1. -1.5V 1.0 GS 0.5 1.2 1.6 2.0 300 250 200 150 ...
... SINGLE PULSE T = MAX RATED 260 C 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 V = -4. 0 ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted J 1000 V = -15V DD 100 100us 10 10 1ms 10 10 10ms 10 100ms 10s Figure 10 PULSE WIDTH (s) Figure 11 ...
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. ©2008 Fairchild Semiconductor Corporation FDG332PZ Rev. 25°C unless otherwise noted 260 C RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK qJA qJA www.fairchildsemi.com ...
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...
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