FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet - Page 3

• Manufacturer Part Number: FDG332PZ
• Description: MOSFET P-CH 20V 2.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG332PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG332PZTR

©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
-50
0.0
9
6
3
0
9
6
3
0
Figure 3. Normalized On - Resistance
0.0
Figure 1.
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
I
V
V
D
-25
GS
GS
= -2.6A
-V
vs Junction Temperature
V
= -4.5V
= -4.5V
DD
0.5
DS
0.4
-V
T
J
= -5V
, DRAIN TO SOURCE VOLTAGE (V)
GS
0
,
On-Region Characteristics
JUNCTION TEMPERATURE (
T
, GATE TO SOURCE VOLTAGE (V)
J
= 150
25
1.0
0.8
V
o
GS
C
50
V
= -2.5V
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
T
= -3V
1.5
J
1.2
T
75
V
= -55
T
J
GS
J
= 25°C unless otherwise noted
= 25
= -1.8V
o
C
100
V
o
GS
C
o
2.0
C )
1.6
= -1.5V
125
150
2.5
2.0
3
300
250
200
150
100
1E-3
0.01
2.5
2.0
1.5
1.0
0.5
50
0.1
4
1
1
0.0
0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
T
V
J
GS
= 150
-V
-V
0.2
= 0V
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
o
-I
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
V
2
C
D
I
Source Voltage
GS
D
,
Source to Drain Diode
DRAIN CURRENT (A)
= -2.6A
T
= -1.5V
0.4
3
J
= 25
o
C
3
0.6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
V
T
GS
= -1.8V
J
T
T
= 125
J
J
= -3V
= 25
= -55
0.8
6
o
V
o
C
o
C
GS
4
C
V
= -2.5V
www.fairchildsemi.com
GS
1.0
= -4.5V
5
1.2
9