FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet - Page 5
![MOSFET P-CH 20V 2.6A SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG332PZ
Manufacturer Part Number
FDG332PZ
Description
MOSFET P-CH 20V 2.6A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG332PZ.pdf
(6 pages)
Specifications of FDG332PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
95 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG332PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG332PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
111 136
Company:
Part Number:
FDG332PZ
Manufacturer:
VISHAY
Quantity:
5 709
Part Number:
FDG332PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Typical Characteristics
0.01
0.1
2
1
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-2
SINGLE PULSE
R
JA
T
Figure 12.
= 260
J
= 25°C unless otherwise noted
o
C/W
10
Transient Thermal Response Curve
-1
t, RECTANGULAR PULSE DURATION (s)
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
1
J
= P
DM
x Z
P
qJA
DM
1
/t
x R
2
qJA
10
t
1
+ T
2
t
2
A
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10
3