FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet - Page 2

• Manufacturer Part Number: FDG332PZ
• Description: MOSFET P-CH 20V 2.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG332PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 560pF @ 10V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG332PZTR

©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
the user's board design.
FS
BV
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
V
Symbol
JA
DSS
T
T
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
a. 170°C/W when mounted on
and Maximum Ratings
a 1 in
2
pad of 2 oz copper .
I
I
V
V
V
I
V
V
V
V
V
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
= 2.6A, di/dt = 100A/ s
= -250 A, V
= -250 A, referenced to 25°C
= -250 A, referenced to 25°C
= -10V, V
= -16V, V
= -5V, I
= -10V, I
= -4.5V, V
= 0V, I
= ±8V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5V, I
= -4.5V, I
= -4.5V, R
2
DS
Test Conditions
, I
S
D
D
= -0.6A
D
DS
GS
= -250 A
D
D
D
D
D
= -2.6A
DD
GS
GS
GEN
= -2.6A,
= 0V
= -2.6A
= -2.2A
= -1.9A
= -1.0A
= -2.6A , T
= 0V, f = 1MHZ
= 0V
= 0V
= -10V, I
= 6
(Note 2)
D
J
= -2.6A
= 125°C
JC
is guaranteed by design while R
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
Min
-0.4
-20
-0.7
Typ
-0.7
117
147
100
420
-13
5.2
4.8
7.6
0.9
1.9
2.5
28
59
28
73
90
85
75
8
9
Max
10.8
-1.5
-0.6
-1.2
±10
115
160
330
133
560
115
115
CA
45
13
www.fairchildsemi.com
95
10
10
95
45
-1
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
A
V
V
S
A
A