FQT5P10TF Fairchild Semiconductor, FQT5P10TF Datasheet

MOSFET P-CH 100V 1A SOT-223

FQT5P10TF

Manufacturer Part Number
FQT5P10TF
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Type
Power MOSFETr
Datasheet

Specifications of FQT5P10TF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.05 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
30 ns
Rise Time
70 ns
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
1.05Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQT5P10TF
FQT5P10TFTR

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©2002 Fairchild Semiconductor Corporation
FQT5P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -1.0A, -100V, R
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• Improved dv/dt capability
Typ
G
--
DS(on)
-55 to +150
FQT5P10
0.016
= 1.05
-100
-1.0
-0.8
-4.0
-1.0
-6.0
300
0.2
2.0
55
30
D
S
@V
Max
62.5
QFET
GS
= -10 V
Rev. B, August 2002
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQT5P10TF Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Fairchild Semiconductor Corporation Features • -1.0A, -100V, R • Low gate charge ( typical 6.3 nC) • Low Crss ( typical 18 pF) • Fast switching • Improved dv/dt capability ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 83mH -1.0A -25V ≤ -4.5A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 ...

Page 3

... C oss C 350 iss 300 250 200 C rss 150 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 0 10 150℃ 25℃ Figure 2. Transfer Characteristics 0 10 150℃ ※ Note : T = 25℃ 0.0 0.5 Figure 4. Body Diode Forward Voltage Variation vs ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : -250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 1.0 0.8 100 0.6 100 ms 0.4 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2002 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. B, August 2002 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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