FQT5P10TF Fairchild Semiconductor, FQT5P10TF Datasheet - Page 4

• Manufacturer Part Number: FQT5P10TF
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQT5P10TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.05 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 30 ns
• Rise Time: 70 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.05Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQT5P10TF; FQT5P10TFTR

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
T
-V
vs. Temperature
10
J
, Junction Temperature [
Operation in This Area
is Limited by R
DS
0
0
※ Notes :
, Drain-Source Voltage [V]
1 0
1. T
2. T
3. Single Pulse
1 0
1 0
1 0
- 1
C
J
2
1
0
1 0
= 150
= 25
- 5
DS(on)
o
0 . 0 1
C
0 . 0 2
o
0 . 0 5
C
D = 0 .5
50
0 . 2
0 . 1
DC
Figure 11. Transient Thermal Response Curve
10
1 0
1
100 ms
- 4
100
(Continued)
o
C]
10 ms
※ Notes :
s in g le p u ls e
1. V
2. I
D
1 0
t
G S
1 ms
= -250 μ A
1
= 0 V
150
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
- 3
100 s
10
2
1 0
200
- 2
1 0
- 1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
-100
25
1 0
0
Figure 8. On-Resistance Variation
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
-50
θ J C
J M
DM
- T
50
( t ) = 6 2 . 5 ℃ /W M a x .
1 0
vs. Case Temperature
C
1
= P
T
vs. Temperature
J
t
, Junction Temperature [
T
D M
1
0
C
t
, Case Temperature [ ℃ ]
2
* Z
1
75
/ t
θ J C
1 0
2
( t )
2
50
100
1 0
3
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -0.5 A
= -10 V
Rev. B, August 2002
150
200