FQT5P10TF Fairchild Semiconductor, FQT5P10TF Datasheet - Page 2

• Manufacturer Part Number: FQT5P10TF
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQT5P10TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.05 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 30 ns
• Rise Time: 70 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.05Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQT5P10TF; FQT5P10TFTR

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 83mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
trr
Qrr
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
SD
FS
B
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
VDSS
DSS
≤ -4.5A, di/dt ≤ 300A/ s, V
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -1.0A, V
DD
= -25V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
T
J
= 25°C
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -100 V, V
= -80 V, T
= V
= -40 V, I
= -25 V, V
= -80 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -50 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
D
= -1.0 A
= -4.5 A,
D
D
DS
C
= -250 A
GS
DS
= -0.5 A
= -4.5 A,
GS
= -0.5 A
= -4.5 A,
= 125°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-100
Min
-2.0
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0.82
0.27
Typ
-0.1
190
1.4
6.3
1.7
3.0
70
18
70
12
30
85
--
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--
9
Max
-100
1.05
100
-4.0
250
150
-1.0
-4.0
-4.0
-10
8.2
90
25
30
35
70
-1
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Rev. B, August 2002
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C