FQT5P10TF Fairchild Semiconductor, FQT5P10TF Datasheet - Page 3

• Manufacturer Part Number: FQT5P10TF
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQT5P10TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.05 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 30 ns
• Rise Time: 70 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.05Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQT5P10TF; FQT5P10TFTR

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
500
450
400
350
300
250
200
150
100
10
2.5
2.0
1.5
1.0
0.5
0.0
50
-1
-2
0
0
10
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
GS
3
-V
-V
C
C
C
oss
iss
rss
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
V
D
10
GS
10
, Drain Current [A]
0
= - 20V
0
V
GS
※ Note :
1. 250μ s Pulse Test
2. T
= - 10V
6
C
= 25℃
C
C
C
iss
oss
rss
= C
= C
= C
※ Note : T
10
9
gs
gd
10
ds
1
+ C
+ C
1
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
J
= 25℃
ds
GS
= shorted)
= 0 V
12
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
1
150℃
25℃
Variation vs. Source Current
0.5
150℃
4
2
-V
-V
Q
and Temperature
SD
GS
25℃
G
1.0
V
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
DS
V
3
= -80V
DS
-55℃
V
= -50V
DS
= -20V
1.5
6
4
5
2.0
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
6
8
DS
GS
= -40V
= 0V
2.5
D
= -4.5 A
7
Rev. B, August 2002
3.0
10
8