FDC658P Fairchild Semiconductor, FDC658P Datasheet

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... SuperSOT -8 SO 25°C unless otherwise note A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) February 1999 MOSFET = 0.050 @ V = -10 V DS(ON 0.075 @ V = -4.5 V. DS(ON package: small footprint (72% smaller than SOT-223 SOIC- Ratings -30 ±20 -4 -20 1.6 0.8 -55 to 150 78 30 Units °C °C/W °C/W FDC658P Rev.C ...

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... Referenced - - -5V - 1.0 MHz GEN Min Typ Max - - -10 J 100 -100 -1 -1 4.1 0.041 0. 125 C 0.058 0.08 J 0.06 0.075 -20 9 750 220 100 1.8 3 -1.3 -0.76 -1.2 (Note 2) JC Units V o mV/ C µA µ mV guaranteed FDC658P Rev.C ...

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... DRAIN CURRENT (A) D Drain Current and Gate Voltage - 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC658P Rev 1.4 ...

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... Transient thermal response will change depending on the circuit board design MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =156°C 25° SINGLE PULSE TIME (SEC) Dissipation. R ( 156°C/W JA P(pk ( Duty Cycle 100 FDC658P Rev.C C iss C oss C rss 15 30 100 300 300 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...