FDC658P Fairchild Semiconductor, FDC658P Datasheet - Page 4

• Manufacturer Part Number: FDC658P
• Description: MOSFET P-CH 30V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC658P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics (continued)
0.03
0.01
0.3
0.1
Figure 7. Gate Charge Characteristics.
80
30
10
Figure 9. Maximum Safe Operating Area.
10
3
1
8
6
4
2
0
0.1
0
R
I
SINGLE PULSE
D
0.005
0.05
0.02
0.01
JA
= -4A
0.2
V
0.5
0.2
0.1
T
0.00001
GS
A
1
= 156°C/W
= 25°C
= -10V
3
D = 0.5
-V
0.5
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
Q
g
0.02
1
, GATE CHARGE (nC)
0.0001
0.01
6
Single Pulse
Figure 11. Transient Thermal Response Curve.
2
V
DS
= -5V
9
5
0.001
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1b.
10
-15V
12
20
-10V
0.01
15
50
t , TIME (sec)
1
0.1
3000
1000
300
100
5
4
3
2
1
0
0.01
30
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics .
f = 1 MHz
V
Dissipation.
GS
= 0 V
0.3
0.1
-V
1
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
T - T
1
Duty Cycle, D = t / t
J
1
R
t
JA
R
1
A
10
t
JA
= P * R
(t) = r(t) * R
2
= 156°C/W
3
JA
10
1
(t)
SINGLE PULSE
R
2
JA
7
100
JA
T = 25°C
A
=156°C/W
FDC658P Rev.C
15
100
300
C oss
C iss
C rss
300
30