FDC658P Fairchild Semiconductor, FDC658P Datasheet - Page 3

• Manufacturer Part Number: FDC658P
• Description: MOSFET P-CH 30V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC658P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
20
16
12
1.6
1.4
1.2
0.8
0.6
20
16
12
8
4
0
1
8
4
0
-50
0
1
Figure 3. On-Resistance Variation
Figure 1. On-Region Characteristics.
V
V
I = -4A
DS
Figure 5. Transfer Characteristics.
D
GS
V
= -5V
-25
GS
= -10V
= -10V
2
-V
-V
T , JUNCTION TEMPERATURE (°C)
1
GS
-6.0V
0
with Temperature.
DS
J
, GATE TO SOURCE VOLTAGE (V)
-4.5V
, DRAIN-SOURCE VOLTAGE (V)
25
T = -55°C
-4.0V
3
J
50
2
-3.5V
4
75
25°C
125°C
-3.0V
100
3
5
125
150
4
6
0.0001
0.16
0.12
0.08
0.04
0.001
1.8
1.6
1.4
1.2
0.8
0.01
2
1
0
0.1
20
10
0
2
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
Figure 6. Body Diode Forward Voltage
0
V
V
GS
GS
= 0V
0.2
= -4.0 V
-V
4
SD
-V
GS
T = 125°C
4
, BODY DIODE FORWARD VOLTAGE (V)
Gate-to-Source Voltage.
-4.5V
J
Drain Current and Gate Voltage.
Variation with Source Current
and Temperature.
0.4
, GATE TO SOURCE VOLTAGE (V)
- I
-5.0V
D
, DRAIN CURRENT (A)
8
-6.0V
0.6
25°C
6
-8.0V
T = 125°C
T = 25°C
0.8
J
J
12
-55°C
-10.0V
1
8
16
I = -2A
D
1.2
FDC658P Rev.C
1.4
10
20