FDC658P Fairchild Semiconductor, FDC658P Datasheet - Page 2

• Manufacturer Part Number: FDC658P
• Description: MOSFET P-CH 30V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC658P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
V
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
S
Notes:
1. R
FS
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
a. 78
b. 156
by design while R
JA
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
o
/ T
C/W when mounted on a 1 in
/ T
o
C/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
CA
is determined by the user's board design.
(Note 2)
2
pad of 2oz Cu on FR-4 board.
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
= -24 V, V
= V
= -5V, I
= -15 V, V
= -15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -15 V, I
= -10 V, R
= -5 V
= 0 V, I
GS
, I
D
D
D
S
= -250 µA
= -1.3 A
= -4 A
DS
= -250 µA
D
D
D
DS
DS
D
GS
GS
GEN
= -4.0 A,
= -4.0 A
= -3.4 A
= 0 V
= -1 A,
= 0 V
= -5 V
= 0 V
= 0 V,
= 6
(Note 2)
T
T
J
J
= 55
= 125
o
o
C
C
o
C
o
C
Min
-30
-20
-1
0.041
0.058
-0.76
0.06
Typ
-1.7
750
220
100
-22
4.1
1.8
12
14
24
16
9
8
3
0.075
Max
-100
0.05
0.08
-1.3
-1.2
-10
100
22
25
38
27
12
-1
-3
JC
FDC658P Rev.C
is guaranteed
mV/
mV/
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
C
o
C