FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 36

• Manufacturer Part Number: FQPF4N25
• Description: MOSFET N-CH 250V 2.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF4N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 32W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 32 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-252 (DPAK) (Continued)
HUFA76419D3S
FQD30N06L
FQD30N06
HUFA76413D3S
FDD5612
FQD20N06L
FQD20N06LE
FQD20N06
HUFA76409D3S
RFD12N06RLESM
FDD107AN06LA0
HUF76407D3S
HUFA76407D3S
FQD13N06L
FQD13N06
RFD3055SM
FDD16AN08A0
FDD3570
FDD3580
FQD24N08
FQD17N08L
IRLR130A
IRLR120A
IRLR110A
FDD3672
FDD3670
FDD3682
FDD3680
HUF76629D3S
HUFA76629D3S
FDD3690
HUF76619D3S
HUFA76619D3S
HUF75617D3S
HUFA75617D3S
FQD19N10
FQD19N10L
IRFR130A
HUF76609D3S
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
75
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.037
0.039
0.045
0.049
0.055
0.063
0.063
0.063
0.091
0.092
0.092
0.016
0.019
0.029
0.028
0.032
0.036
0.046
0.052
0.052
0.064
0.085
0.085
10V
0.06
0.06
0.11
0.14
0.15
0.06
0.09
0.09
0.11
0.16
0.1
0.1
0.1
–
–
–
R
DS(ON)
0.047@5V
0.064@6V
0.075@5V
0.075@5V
0.107@5V
0.029@6V
0.022@6V
0.033@6V
0.115@5V
0.047@6V
0.035@6V
0.051@6V
0.071@6V
0.14@5V
0.12@5V
0.22@5V
0.44@5V
0.06@6V
0.11@5V
0.043
0.056
0.071
0.075
0.107
0.107
0.054
0.054
0.087
0.087
0.165
4.5V
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-31
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
11.5
16.9
10.2
18.5
7.5
9.5
9.5
4.2
9.4
9.4
4.8
7.5
8.8
5.5
23
15
19
17
12
12
10
31
54
35
19
24
57
38
38
38
28
24
24
18
18
19
14
27
13
= 5V
I
D
22.7
17.2
17.2
16.8
19.6
12.9
15.6
15.6
7.7
8.4
4.7
20
24
20
18
18
18
10
12
12
11
10
12
50
10
13
44
34
32
25
20
20
22
18
18
16
16
13
10
(A)
MOSFETs
P
D
135
135
110
110
75
44
44
60
42
38
38
38
49
49
25
38
38
28
28
53
69
42
50
40
46
35
22
83
95
60
60
75
75
64
64
50
50
41
49
(W)