FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 65
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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TO-220F (Continued)
FQPF32N12V2
FQPF46N15
FQPF28N15
FQPF16N15
FQPF14N15
FQPF9N15
FQPF6N15
FQPF5N15
IRLS640A
IRLS630A
IRLS620A
SSS45N20B
FQPF34N20
FQPF34N20L
FQPF32N20C
IRFS650B
FQPF18N20V2
FQPF19N20
FQPF19N20C
IRFS640B
FQPF10N20C
FQPF630
IRFS630B
FQPF7N20
FQPF7N20L
IRFS620B
FQPF5N20
FQPF5N20L
FQPF4N20L
FQPF4N20
IRFS610B
FQPF27N25
IRFS654B
FQPF16N25
FQPF16N25C
Products
Min. (V)
BV
120
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.042
0.065
0.075
0.075
0.082
0.085
10V
0.05
0.09
0.16
0.21
0.14
0.15
0.17
0.18
0.36
0.69
0.75
1.35
0.11
0.14
0.23
0.27
0.4
0.6
0.8
0.4
0.4
0.8
1.2
1.2
1.4
1.5
–
–
–
R
DS(ON)
0.18@5V
0.08@5V
0.78@5V
1.25@5V
0.4@5V
0.8@5V
1.4@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-60
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
18.6
10.3
82.5
40.5
133
GS
6.5
5.4
6.8
4.8
7.2
41
85
40
23
18
10
40
60
55
95
20
31
45
20
19
22
12
50
95
27
41
6
4
8
5
=5V
I
D
25.6
16.7
11.6
17.5
17.5
11.8
15.6
9.8
6.9
4.2
9.8
6.5
4.1
9.5
6.3
4.8
3.5
3.5
2.8
3.3
9.5
32
20
28
28
18
19
18
14
15
5
9
5
5
3
(A)
MOSFETs
P
D
50
60
53
48
44
38
32
40
26
57
55
50
50
40
50
43
43
38
38
38
37
37
32
32
27
27
22
55
50
50
43
66
36
55
32
(W)
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