FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 73
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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TO-3P (Continued)
FQA9P25
SFH9250L
FQA12P20
SFH9240
FQA36P15
SFH9154
FQA22P10
FQA17P10
SFH9140
FQA47P06
TO-3P P-Channel
Products
Min. (V)
BV
-250
-200
-200
-200
-150
-150
-100
-100
-100
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
10V
0.62
0.47
0.09
0.19
0.5
0.2
0.2
–
R
DS(ON)
0.23@5V
4.5V
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-68
2.5V
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
125
100
GS
29
90
31
46
40
30
43
84
=5V
I
D
10.5
19.5
12.6
36
24
19
11
18
18
55
(A)
MOSFETs
P
D
150
204
150
126
294
204
150
120
166
214
(W)
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