FQP11N40C Fairchild Semiconductor, FQP11N40C Datasheet - Page 3

• Manufacturer Part Number: FQP11N40C
• Description: MOSFET N-CH 400V 10.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11N40C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N40C/FQPF11N40C Rev. C1
Typical Performance Characteristics
2000
1800
1600
1400
1200
1000
Figure 5. Capacitance Characteristics
10
Figure 3. On-Resistance Variation vs.
800
600
400
200
10
10
Figure 1. On-Region Characteristics
-1
0
1
0
2.0
1.5
1.0
0.5
10
-1
Top :
Bottom : 4.5 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
10
0
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
D
15
0
, Drain Current [A]
C
C
C
oss
V
iss
rss
GS
= 10V
20
25
C
C
C
10
iss
oss
rss
1
= C
= C
= C
10
V
Notes :
gs
gd
ds
GS
30
1. 250
2. T
1
+ C
Note : T
+ C
= 20V
C
gd
gd
= 25
P
(C
s Pulse Test
J
ds
Notes ;
q
= 25
1. V
2. f = 1 MHz
= shorted)
C
35
GS
q
C
= 0 V
40
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
0.2
2
0
Variation vs. Source Current
25
q
C
0.4
5
150
and Temperatue
q
4
C
V
V
Q
GS
150
SD
G
0.6
, Gate-Source Voltage [V]
10
, Source-Drain voltage [V]
, Total Gate Charge [nC]
q
C
V
25
DS
q
V
= 400V
C
DS
-55
V
= 250V
DS
0.8
15
6
q
C
= 100V
Notes :
1. V
2. 250
1.0
20
GS
P
= 0V
s Pulse Test
8
Note : I
Notes :
1. V
2. 250
DS
www.fairchildsemi.com
D
P
1.2
25
= 40V
s Pulse Test
= 10.5A
10
1.4
30