FQP11N40C Fairchild Semiconductor, FQP11N40C Datasheet - Page 9

• Manufacturer Part Number: FQP11N40C
• Description: MOSFET N-CH 400V 10.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11N40C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
(Continued)
TO-220F
Dimensions in Millimeters
FQP11N40C/FQPF11N40C Rev. C1
9
www.fairchildsemi.com