FQP11N40C Fairchild Semiconductor, FQP11N40C Datasheet - Page 5

• Manufacturer Part Number: FQP11N40C
• Description: MOSFET N-CH 400V 10.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11N40C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N40C/FQPF11N40C Rev. C1
Typical Performance Characteristics
Figure 11-1. ransient Thermal Response Curve of FQP3N50C
Figure 11-2. ransient Thermal Response Curve of FQPF3N50C
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
1 0
0
- 1
- 2
1 0
0
- 5
- 5
D = 0 .5
0 .0 1
0 .0 5
0 .0 2
0 .2
D = 0 .5
0 .1
0 .1
0 . 0 5
0 . 2
0 .0 2
0 . 0 1
s in g le p u ls e
1 0
1 0
s in g le p u ls e
- 4
- 4
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
- 3
(Continued)
5
1 0
1 0
- 2
-2
1 0
1 0
N o t e s :
-1
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
P
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
N o te s :
DM
P
T
J M
J M
DM
J C
J C
( t) = 0 . 9 3
- T
( t ) = 2 . 8 6
- T
C
C
t
1
= P
= P
t
2
1 0
t
D M
1
1 0
D M
q
t
0
C / W M a x .
2
* Z
* Z
0
/W M a x .
1
1
T
/ t
/t
J C
2
2
J C
( t )
( t )
1 0
1 0
1
1
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