FQP11N40C Fairchild Semiconductor, FQP11N40C Datasheet - Page 4

• Manufacturer Part Number: FQP11N40C
• Description: MOSFET N-CH 400V 10.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP11N40C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7.1 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.5 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP11N40C/FQPF11N40C Rev. C1
Typical Performance Characteristics
10
10
10
10
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
-1
12
10
2
1
0
10
8
6
4
2
0
25
0
Figure 10. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
-100
50
-50
Notes :
1. T
2. T
3. Single Pulse
V
Operation in This Area
is Limited by R
vs. Temperature
C
J
DS
= 25
= 150
of FQP4N50C
T
10
, Drain-Source Voltage [V]
C
T
1
, Case Temperature [
q
J
C
q
C
, Junction Temperature [
0
75
DS(on)
100 ms
50
DC
10 ms
100
10
1 ms
2
q
C]
100
100
q
C]
125
P
Notes :
1. V
2. I
s
10
D
GS
= 250
P
150
s
= 0 V
P
A
10
150
3
200
(Continued)
4
Figure 9-2. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
-100
-1
2
1
0
10
0
-50
of FQPF4N50C
vs. Temperature
Operation in This Area
is Limited by R
Notes :
1. T
2. T
3. Single Pulse
V
T
C
J
DS
J
, Junction Temperature [
= 15
= 25
10
, Drain-Source Voltage [V]
0
1
q
q
C
C
DS(on)
DC
50
100 ms
10 ms
10
100
1 ms
2
q
C]
100
Notes :
P
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1. V
2. I
s
10
150
D
GS
P
= 5.25 A
s
= 10 V
10
200
3