FQB34P10TM Fairchild Semiconductor, FQB34P10TM Datasheet

MOSFET P-CH 100V 33.5A D2PAK

FQB34P10TM

Manufacturer Part Number
FQB34P10TM
Description
MOSFET P-CH 100V 33.5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB34P10TM

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16.75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2910pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
33.5 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2004 Fairchild Semiconductor Corporation
FQB34P10 / FQI34P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• -33.5A, -100V, R
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 170 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
2
-PAK
FQB34P10 / FQI34P10
Typ
--
--
--
DS(on)
-55 to +175
G
-33.5
-23.5
2200
-33.5
-100
-134
15.5
3.75
1.03
-6.0
155
300
= 0.06
! ! ! !
! ! ! !
25
Max
0.97
62.5
@V
40
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
QFET
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
GS
= -10 V
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. B, June 2004
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQB34P10TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2004 Fairchild Semiconductor Corporation Features • -33.5A, -100V, R • Low gate charge ( typical 85 nC) • Low Crss ( typical 170 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =mH -33.5A -25V -33.5A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -100 - 150° ...

Page 3

... C oss 5000 C 4500 iss 4000 3500 3000 C 2500 rss 2000 1500 1000 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 2 10 175 ℃ ℃ Note : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 175 ℃ ...

Page 4

... Operation in This Area is Limited by R DS(on Notes : ※ 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2004 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 Notes : ※ 0 -250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 40 35 100 ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2004 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. B, June 2004 ...

Page 8

... Mechanical Dimensions ©2004 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. B, June 2004 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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