FQB34P10TM Fairchild Semiconductor, FQB34P10TM Datasheet - Page 2
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FQB34P10TM
Manufacturer Part Number
FQB34P10TM
Description
MOSFET P-CH 100V 33.5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB34P10TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16.75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2910pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
33.5 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB34P10TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
-33.5A, di/dt
T
AS
J
= -33.5A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
300A/ s, V
DD
= -25V, R
300 s, Duty cycle
DD
Parameter
G
BV
= 25
DSS,
Starting T
Starting T
2%
J
J
= 25°C
T
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -100 V, V
= -80 V, T
= V
= -40 V, I
= -25 V, V
= -80 V, I
= 0 V, I
= -25 V, V
= 25 V, V
= -10 V, I
= -50 V, I
= -10 V
= 0 V, I
= 0 V, I
GS
Test Conditions
, I
D
S
S
D
= -250 A
D
D
= -33.5 A
= -33.5 A,
D
D
DS
C
= -250 A
GS
DS
= -16.75 A
= -33.5 A,
GS
= -16.75 A
= -33.5 A,
= 150°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-100
-2.0
Min
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0.049
2240
0.88
Typ
-0.1
730
170
250
160
210
160
23
25
85
15
45
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-33.5
2910
Max
-100
0.06
-134
100
-4.0
950
220
510
330
430
-4.0
110
-10
60
-1
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Rev. B, June 2004
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C