FQB34P10TM Fairchild Semiconductor, FQB34P10TM Datasheet - Page 3

• Manufacturer Part Number: FQB34P10TM
• Description: MOSFET P-CH 100V 33.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB34P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2910pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 23 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33.5 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
10
10
500
-1
-2
2
1
0
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
10
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -4.5 V
Figure 3. On-Resistance Variation vs.
-1
0
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
25
GS
-V
50
C
C
C
V
oss
iss
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
-I
75
D
0
0
, Drain Current [A]
V
V
GS
GS
100
= - 20V
= - 10V
※
125
1. 250µ s Pulse Test
2. T
Note :
C
C
C
C
iss
oss
rss
= 25 ℃
= C
= C
= C
10
※
150
gs
ds
gd
10
1
+ C
Note : T
+ C
1
gd
gd
※
(C
1. V
2. f = 1 MHz
Notes :
ds
J
= 25 ℃
175
= shorted)
GS
= 0 V
200
10
10
10
10
10
12
10
10
10
10
8
6
4
2
0
-1
2
1
0
-1
2
1
0
0
0.0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25 ℃
175 ℃
Figure 2. Transfer Characteristics
175 ℃
0.5
Variation vs. Source Current
20
25 ℃
4
-V
-V
-55 ℃
Q
SD
GS
and Temperature
G
1.0
V
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
DS
V
= -80V
DS
40
= -50V
V
DS
= -20V
1.5
6
60
2.0
※
※
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µs Pulse Test
Notes :
Notes :
8
Note : I
DS
G S
= -40V
80
= 0V
D
2.5
= -33.5 A
100
3.0
10
Rev. B, June 2004