FQB34P10TM Fairchild Semiconductor, FQB34P10TM Datasheet - Page 4

• Manufacturer Part Number: FQB34P10TM
• Description: MOSFET P-CH 100V 33.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB34P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2910pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 23 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33.5 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
-1
Figure 9. Maximum Safe Operating Area
2
1
0
10
1.2
1.1
1.0
0.9
0.8
Figure 7. Breakdown Voltage Variation
-100
0
Operation in This Area
is Limited by R
-50
-V
vs. Temperature
T
DS
J
DS(on)
, Junction Temperature [
, Drain-Source Voltage [V]
※
0
1. T
2. T
3. Single Pulse
Notes :
C
J
= 175
= 25
10
1
o
C
o
1 0
1 0
C
1 0
50
-1
-2
0
1 0
DC
-5
0 .0 5
0 .0 2
0 .0 1
Figure 11. Transient Thermal Response Curve
D = 0 .5
0 .2
0 .1
10 ms
(Continued)
100
1 ms
o
C]
1 0
※
100 s
1. V
2. I
Notes :
-4
sin g le p u ls e
D
GS
= -250 µA
= 0 V
150
t
10
1
, S q u a re W a v e P u lse D u ra tio n [se c ]
2
1 0
200
-3
1 0
-2
40
35
30
25
20
15
10
5
0
25
2.5
2.0
1.5
1.0
0.5
0.0
-100
※
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1. Z
2. D u ty F a cto r, D = t
3. T
P
-1
N ote s :
DM
θ J C
JM
50
- T
(t) = 0 .97
-50
C
= P
vs. Case Temperature
t
DM
1
T
vs. Temperature
1 0
t
T
75
C
℃
* Z
2
, Case Temperature [ ]
J
0
, Junction Temperature [
/W M a x.
1
θ JC
/t
0
2
(t)
100
50
1 0
1
125
℃
100
o
C]
※
1. V
2. I
150
Notes :
150
D
G S
= -16.75 A
= -10 V
175
200
Rev. B, June 2004