SI4378DY-T1-E3 Vishay, SI4378DY-T1-E3 Datasheet - Page 4

MOSFET N-CH 20V 19A 8-SOIC

SI4378DY-T1-E3

Manufacturer Part Number
SI4378DY-T1-E3
Description
MOSFET N-CH 20V 19A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4378DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 25A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 4.5V
Input Capacitance (ciss) @ Vds
8500pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0027 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
19 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
25A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4378DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4378DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 044
Part Number:
SI4378DY-T1-E3
Manufacturer:
VISHAY
Quantity:
7 856
Part Number:
SI4378DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Company:
Part Number:
SI4378DY-T1-E3
Quantity:
70 000
Si4378DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10 -
3
50
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
75
0.01
100
0.1
10
0.01
10 -
100
1
2
DS(on)
* V
125
Safe Operating Area, Junction-to-Case
GS
*
> minimum V
V
150
0.1
DS
Square Wave Pulse Duration (s)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
10 -
= 25 °C
1
GS
at which R
1
DS(on)
60
50
40
30
20
10
1
0
10 -
10
is specified
2
100 ms
10 ms
1 s
DC
10 s
10 -
100
1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
t
Time (s)
1
A
S09-0226-Rev. C, 09-Feb-09
= P
t
2
Document Number: 72918
DM
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 67 °C/W
100
600
600

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