IRF730 Vishay, IRF730 Datasheet - Page 5

• Manufacturer Part Number: IRF730
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730; IRF730IR

Document Number: 91047
S09-0267-Rev. B, 23-Feb-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91047_09
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
6.0
5.0
4.0
3.0
2.0
1.0
0.0
p
91047_11
to obtain
25
AS
10
R
10 V
0.1
10
G
-2
1
10
50
V
T
DS
-5
C
0 − 0.5
0.2
0.1
0.05
0.02
0.01
, Case Temperature (°C)
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T
0.01 Ω
10
L
100
-4
125
Single Pulse
(Thermal Response)
+
-
10
t
150
V
1
-3
, Rectangular Pulse Duration (S)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
IRF730, SiHF730
p
1
j
D.U.T.
= P
P
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
V
t
1
DS
1
thJC
/t
2
t
t
+ T
2
f
V
+
-
www.vishay.com
C
10
DD
V
DD
5