IRF730 Vishay, IRF730 Datasheet - Page 4

• Manufacturer Part Number: IRF730
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730; IRF730IR

IRF730, SiHF730
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91047_06
91047_05
1200
1500
900
600
300
20
16
12
8
4
0
0
10
0
I
0
D
= 3.5 A
V
V
DD
DS ,
10
Q
V
= 80 V
DD
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= 200 V
V
DD
= 320 V
20
V
C
C
C
GS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= C
= C
10
30
gs
gd
ds
1
+ C
C
+ C
rss
C
C
gd
oss
gd
For test circuit
see figure 13
iss
, C
40
ds
Shorted
50
91047_08
91047_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
Fig. 8 - Maximum Safe Operating Area
1
2
2
0
5
2
5
5
2
1
0.6
0.1
150
2
°
V
5
V
0.7
C
DS
Operation in this area limited
SD
1
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
2
0.8
5
by R
T
T
Single Pulse
10
25
C
J
= 150 °C
= 25 °C
DS(on)
2
°
0.9
C
S09-0267-Rev. B, 23-Feb-09
5
Document Number: 91047
10
2
1.0
2
10
100
1
10
5
ms
10
µs
ms
V
1.1
µs
3
GS
2
= 0 V
5
10
1.2
4