IRF730 Vishay, IRF730 Datasheet - Page 3

• Manufacturer Part Number: IRF730
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730; IRF730IR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91047
S09-0267-Rev. B, 23-Feb-09
91047_02
91047_01
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
0
1
1
0
10
10
Top
Bottom
-1
Top
Bottom
-1
V
V
DS ,
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
, Drain-to-Source Voltage (V)
GS
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
C
1
1
C
= 150 °C
= 25 °C
4.5 V
4.5 V
91047_04
91047_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-1
- 60 - 40 - 20 0
0
1
Fig. 3 - Typical Transfer Characteristics
4
I
V
D
150
GS
= 3.5 A
= 10 V
°
C
V
25
5
GS ,
T
°
J ,
C
Gate-to-Source Voltage (V)
Junction Temperature (°C)
6
20 40 60 80 100 120 140 160
IRF730, SiHF730
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
www.vishay.com
9
10
3