FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet

MOSFET N-CH 300V 59A TO-3P

FDA59N30

Manufacturer Part Number
FDA59N30
Description
MOSFET N-CH 300V 59A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA59N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 29.5A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4670pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Transistor Polarity
N Channel
Continuous Drain Current Id
59A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
56mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.056 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
59 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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©2005 Fairchild Semiconductor Corporation
FDA59N30 Rev. A
FDA59N30
300V N-Channel MOSFET
Features
• 59A, 300V, R
• Low gate charge ( typical 77 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
JC
CS
JA
T
STG
rss
( typical 80 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.056
G
D
S
@V
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25 C
Parameter
Parameter
C
= 25 C)
TO-3PN
FDA Series
C
C
= 25 C)
= 100 C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
0.24
G
--
--
FDA59N30
-55 to +150
!
!
1734
300
236
500
300
4.5
59
35
59
50
30
4
! "
! "
!
!
!
!
S
D
"
"
"
"
"
"
UniFET
Max.
0.25
40
--
www.fairchildsemi.com
Unit
W/ C
V/ns
mJ
mJ
Unit
W
V
A
A
A
V
A
C/W
C/W
C/W
C
C
TM

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FDA59N30 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink CS R Thermal Resistance, Junction-to-Ambient JA ©2005 Fairchild Semiconductor Corporation FDA59N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 0.83mH 59A 50V Starting 59A, di/dt 200A Starting DSS 4. Pulse Test: Pulse width 300 s, Duty Cycle 5. Essentially Independent of Operating Temperature Typical Characteristics FDA59N30 Rev. A Package Reel Size TO-3PN T = 25°C unless otherwise noted C Conditions 250 250 A, Referenced 300V ...

Page 3

... GS 0.07 0.06 0.05 0. Drain Current [A] D Figure 5. Capacitance Characteristics 9000 C oss 6000 C iss 3000 C rss Drain-Source Voltage [V] DS FDA59N30 Rev. A Figure 2. Transfer Characteristics Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V 20V GS Note : ℃ ※ ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [ FDA59N30 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 µ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current 100 s ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDA59N30 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA59N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDA59N30 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDA59N30 Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...

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