FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet - Page 3

• Manufacturer Part Number: FDA59N30
• Description: MOSFET N-CH 300V 59A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA59N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 29.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4670pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 59A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 56mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.056 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 59 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA59N30 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
2
1
0
10
9000
6000
3000
-1
Drain Current and Gate Voltage
Top :
Bottom :
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0
10
-1
0
10.0 V
15.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
C
C
C
V
oss
iss
rss
DS
V
, Drain-Source Voltage [V]
DS
10
50
, Drain-Source Voltage [V]
0
10
I
D
0
, Drain Current [A]
V
75
GS
= 10V
100
C
C
C
iss
oss
rss
10
= C
= C
125
= C
※
10
1
1. 250µ s Pulse Test
2. T
gs
gd
ds
1
Notes :
※
+ C
+ C
C
Note : T
= 25 ℃
gd
gd
V
※
(C
GS
1. V
2. f = 1 MHz
ds
150
Note ;
= 20V
J
= shorted)
= 25 ℃
GS
= 0 V
175
3
12
10
10
10
10
8
6
4
2
0
10
10
10
2
1
0
0
2
1
0
2
0.2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
0.4
Variation vs. Source Current
25
4
20
150
o
C
150 ℃
0.6
o
Q
C
V
V
G
GS
SD
and Temperatue
, Total Gate Charge [nC]
30
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25 ℃
0.8
V
6
V
V
DS
DS
DS
40
= 150V
= 240V
-55
= 60V
1.0
o
C
50
8
1.2
60
※
※
1. V
2. 250µ s Pulse Test
1.4
※
Notes :
Note : I
1. V
2. 250µ s Pulse Test
GS
Notes :
70
= 0V
DS
10
D
= 40V
= 59A
1.6
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80
1.8
12