FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet - Page 2

• Manufacturer Part Number: FDA59N30
• Description: MOSFET N-CH 300V 59A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA59N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 29.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4670pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 59A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 56mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.056 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 59 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA59N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, I
3. I
4. Pulse Test: Pulse width
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
BV
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
FDA59N30
T
59A, di/dt
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 59A, V
200A/ s, V
DD
300 s, Duty Cycle
= 50V, R
DD
Parameter
BV
FDA59N30
Device
DSS
G
= 25 , Starting T
, Starting T
2%
J
= 25 C
T
C
J
= 25°C unless otherwise noted
= 25 C
Package
TO-3PN
V
V
I
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25 C
/dt =100A/ s
= 25
= 300V, V
= 240V, T
= V
= 40V, I
= 25V, V
= 240V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 150V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 59A
= 59A
= 250 A
DS
GS
D
D
DS
C
= 29.5A
GS
= 29.5A
= 250 A
= 59A
= 59A
Reel Size
= 125 C
= 0V
= 0V,
= 0V
= 0V
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
300
3.0
-
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
0.047
3590
710
140
575
120
200
246
0.3
6.9
22
40
52
80
77
--
--
--
--
--
--
--
--
--
Quantity
Max Units
0.056
4670
1160
-100
www.fairchildsemi.com
100
920
120
290
250
410
100
236
5.0
1.4
10
59
--
--
--
--
--
1
--
--
30
V/ C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C