FDA59N30 Fairchild Semiconductor, FDA59N30 Datasheet - Page 4

• Manufacturer Part Number: FDA59N30
• Description: MOSFET N-CH 300V 59A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA59N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 29.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4670pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 59A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 56mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.056 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 59 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA59N30 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
10
-1
-2
3
2
1
0
1.2
1.1
1.0
0.9
0.8
10
-100
0
vs. Temperature
-50
Operation in This Area
is Limited by R
V
T
DS
J
, Junction Temperature [
, Drain-Source Voltage [V]
DS(on)
0
10
1
10
10
-1
-2
10
-5
50
D =0.5
0.02
0.01
DC
Figure 11. Transient Thermal Response Curve
0.05
0.2
0.1
100 ms
※
1. T
2. T
3. Single Pulse
single pulse
100
10 ms
Notes :
C
J
10
= 150
o
= 25
C]
1 ms
-4
10
※
o
1. V
2. I
2
C
o
t
Notes :
C
1
100 s
D
, S quare W ave Pulse D uration [sec]
GS
= 250 µ A
150
= 0 V
10 s
10
-3
200
(Continued)
10
4
-2
70
60
50
40
30
20
10
0
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-100
1. Z
2. D uty Factor, D =t
3. T
10
N otes :
P
-1
DM
θ JC
JM
(t) = 0.25
- T
C
50
= P
-50
t
1
DM
t
vs. Case Temperature
2
℃
10
* Z
T
/W M ax.
1
0
C
/t
θ JC
T
, Case Temperature [ ]
2
vs. Temperature
J
(t)
, Junction Temperature [
0
75
10
1
50
100
℃
100
o
C]
125
※
1. V
2. I
150
Notes :
D
GS
= 29.5 A
= 10 V
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150
200