SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet

MOSFET N-CH 200V 65A D2PAK

SUM65N20-30-E3

Manufacturer Part Number
SUM65N20-30-E3
Description
MOSFET N-CH 200V 65A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM65N20-30-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM65N20-30-E3
SUM65N20-30-E3TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY
Quantity:
742
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
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Manufacturer:
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Quantity:
20 000
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Part Number:
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Quantity:
800
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Part Number:
SUM65N20-30-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
200
Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free)
(V)
G
TO-263
Top View
0.030 at V
D
r
N-Channel 200-V (D-S) 175 °C MOSFET
J
b
DS(on)
S
= 175 °C)
b
GS
(Ω)
= 10 V
C
= 25 °C, unless otherwise noted
I
PCB Mount (TO-263)
D
65
(A)
a
T
T
T
L = 0.1 mH
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
d
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• 100 % R
• Isolated DC/DC Converters
d
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 175
Limit
Limit
± 20
375
3.75
D
S
200
140
65
37
0.4
35
61
40
SUM65N20-30
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SUM65N20-30-E3

SUM65N20-30-E3 Summary of contents

Page 1

... DS(on) 0.030 200 GS TO-263 Top View Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM65N20-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71702 S-80272-Rev. D, 11-Feb- 0.060 °C C 0.045 25 °C 125 °C 0.030 0.015 0.000 80 100 120 100 125 150 SUM65N20-30 Vishay Siliconix 140 120 100 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SUM65N20-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 2.5 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 = 25 °C 0.01 0.1 1 100 T = 150 ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71702. Document Number: 71702 S-80272-Rev. D, 11-Feb-08 100 125 150 175 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM65N20-30 Vishay Siliconix 1000 r DS(on) Limited* 100 °C C Single Pulse 0.1 0.1 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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