SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM65N20-30-E3
• Description: MOSFET N-CH 200V 65A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM65N20-30-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM65N20-30-E3; SUM65N20-30-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
7000
6000
5000
4000
3000
2000
1000
140
120
100
180
150
120
80
60
40
20
90
60
30
0
0
0
0
0
0
V
GS
= 10 thru 7 V
25
20
C
2
V
V
rss
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
Transconductance
- Drain-to-Source Voltage (V)
50
40
I
D
Capacitance
- Drain Current (A)
4
C
75
60
C
oss
iss
6
100
80
T
C
8
= - 55 °C
125
100
125 °C
25 °C
6 V
5 V
4 V
150
120
10
0.060
0.045
0.030
0.015
0.000
140
120
100
20
16
12
80
60
40
20
8
4
0
0
0
0
0
V
I
D
DS
= 65 A
1
On-Resistance vs. Drain Current
25
20
= 100 V
V
Transfer Characteristics
GS
Q
V
2
g
GS
- Gate-to-Source Voltage (V)
50
- Total Gate Charge (nC)
40
I
D
= 10 V
Gate Charge
- Drain Current (A)
25 °C
T
3
SUM65N20-30
C
75
= 125 °C
60
Vishay Siliconix
4
100
80
www.vishay.com
5
100
125
- 55 °C
6
120
150
7
3