SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 2

• Manufacturer Part Number: SUM65N20-30-E3
• Description: MOSFET N-CH 200V 65A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM65N20-30-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM65N20-30-E3; SUM65N20-30-E3TR

SUM65N20-30
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
I
Symbol
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
C
I
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
= 25 °C
V
V
V
I
V
V
D
DS
DS
V
DS
GS
GS
GS
≅ 65 A, V
= 200 V, V
= 200 V, V
I
= 100 V, V
= 10 V, I
= 10 V, I
F
V
V
V
V
= 0 V, V
V
V
V
DD
b
= 50 A, di/dt = 100 A/µs
DS
V
DS
DS
I
DS
F
DS
DS
GS
Test Conditions
= 65 A, V
= 0 V, V
= 100 V, R
= V
= 200 V, V
= 0 V, I
≥ 5 V, V
= 10 V, I
= 15 V, I
GEN
D
D
GS
DS
GS
GS
= 30 A, T
= 30 A, T
GS
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
D
GS
D
= 10 V, I
GS
GS
= 250 µA
D
D
= 250 µA
L
GS
= ± 20 V
= 30 A
= 30 A
= 10 V
= 1.5 Ω
= 0 V
= 0 V
J
J
J
J
= 125 °C
= 175 °C
g
D
= 125 °C
= 175 °C
= 2.5 Ω
= 85 A
Min.
200
120
0.5
25
2
0.023
5100
Typ.
0.52
480
210
220
200
130
1.7
1.0
90
23
34
24
45
8
S-80272-Rev. D, 11-Feb-08
Document Number: 71702
± 100
0.030
0.063
0.084
Max.
250
130
330
300
140
200
3.3
1.5
1.2
50
35
70
65
12
4
1
Unit
nA
µA
pF
nC
µC
ns
ns
Ω
Ω
V
A
S
A
V
A