SUM65N20-30-E3 Vishay, SUM65N20-30-E3 Datasheet - Page 5
![MOSFET N-CH 200V 65A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
SUM65N20-30-E3
Manufacturer Part Number
SUM65N20-30-E3
Description
MOSFET N-CH 200V 65A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SUM65N20-30-E3.pdf
(6 pages)
Specifications of SUM65N20-30-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM65N20-30-E3
SUM65N20-30-E3TR
SUM65N20-30-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY
Quantity:
742
Part Number:
SUM65N20-30-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
0.01
0.1
75
60
45
30
15
2
1
0
10 -
0
4
0.2
0.1
http://www.vishay.com/ppg?71702.
Single Pulse
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
25
0.02
0.05
T
C
vs. Case Temperature
50
- Ambient Temperature (°C)
75
100
10 -
Normalized Thermal Transient Impedance, Junction-to-Case
3
125
150
Square Wave Pulse Duration (s)
175
10 -
2
1000
100
0.1
10
1
0.1
* V
GS
>
minimum V
V
DS
1
10 -
Single Pulse
Safe Operating Area
T
r
- Drain-to-Source Voltage (V)
Limited*
C
DS(on)
1
= 25 °C
GS
SUM65N20-30
at which r
10
Vishay Siliconix
DS(on)
100
www.vishay.com
is specified
10 µs
100 µs
1 ms
10 ms
100 ms
DC
1
1000
5