HUF75345G3 Fairchild Semiconductor, HUF75345G3 Datasheet

MOSFET N-CH 55V 75A TO-247

HUF75345G3

Manufacturer Part Number
HUF75345G3
Description
MOSFET N-CH 55V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75345G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
275nC @ 20V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
325W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
325000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75345G3
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2009 Fairchild Semiconductor Corporation
75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75345.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75345G3
HUF75345P3
HUF75345S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
SOURCE
75345G
75345P
75345S
DRAIN
BRAND
SOURCE
GATE
HUF75345G3, HUF75345P3, HUF75345S3S
GATE
JEDEC TO-263AB
December 2009
Features
• 75A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensated PSPICE® and SABER™
- Thermal Impedance SPICE and SABER Models
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
DRAIN
(FLANGE)
DRAIN
JEDEC TO-220AB
G
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2
D
S
SOURCE
DRAIN
GATE

Related parts for HUF75345G3

HUF75345G3 Summary of contents

Page 1

... Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-220AB DRAIN (FLANGE) DRAIN (FLANGE) HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 SOURCE DRAIN GATE ...

Page 2

... Figure 4 DM Figure 6 AS 325 D 2. -55 to 175 J STG 300 L 260 pkg MIN = 0V (Figure 11 150 30V ≅ 75A 0.4Ω 1.0mA g(REF) (Figure 13 HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 UNITS TYP MAX UNITS - - V µ µA - 250 ±100 - 0.006 0.007 0. C/W - 195 ...

Page 3

... RECTANGULAR PULSE DURATION (s) MIN TYP - 4000 - 1450 - 450 MIN TYP - - - - - - 100 T , CASE TEMPERATURE ( C FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE NOTES: DUTY FACTOR PEAK HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 MAX UNITS - MAX UNITS 1. 125 150 175 θJC θ ...

Page 4

... NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 120 175 C - 1.5 3 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75345G3, HUF75345P3, HUF75345S3S Rev DERATE PEAK 175 - T C 150 +1] DSS 100 o ...

Page 5

... C ISS 4000 3000 2000 C OSS 1000 C RSS DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 75A 55A 35A 20A D 75 100 125 HUF75345G3, HUF75345P3, HUF75345S3S Rev 250µ 200 80 120 160 0V 1MHz ISS RSS GD ≈ OSS ...

Page 6

... HUF75345G3, HUF75345P3, HUF75345S3S DUT I AS 0.01Ω DUT DUT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS g(TOT g(10 g(TH g(REF) 0 FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10 50% PULSE WIDTH 10% 0 FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 DSS 20V 10V GS t OFF t d(OFF 90% 10% 90% 50% ...

Page 7

... HUF75345G3, HUF75345P3, HUF75345S3S 10 RSLC2 - 6 ESG 8 + LGATE EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS DPLCAP 5 RSLC1 DBREAK ESLC RDRAIN EBREAK 18 - EVTHRES MWEAK 8 MMED MSTRO CIN 8 RSOURCE RBREAK EDS RVTHRES HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 LDRAIN DRAIN 2 RLDRAIN DBODY LSOURCE SOURCE 7 3 RLSOURCE 18 RVTEMP 19 - VBAT + 22 ...

Page 8

... RLGATE S1A S1B EGS - - DPLCAP 5 RSLC1 RDBREAK 51 RSLC2 72 ISCL DBREAK 50 RDRAIN 11 EVTHRES MWEAK 8 6 EBREAK MMED + MSTRO CIN 8 RSOURCE S2A RBREAK 15 17 S2B EDS RVTHRES HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 LDRAIN DRAIN 2 RLDRAIN RDBODY 71 DBODY LSOURCE SOURCE 7 3 RLSOURCE 18 RVTEMP 19 - VBAT + 22 ...

Page 9

... Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2 ...

Page 10

... HUF75345G3, HUF75345P3, HUF75345S3S Mechanical Dimensions TO-220AB Dimensions in Millimeters ...

Page 11

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...

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