HUF75345G3 Fairchild Semiconductor, HUF75345G3 Datasheet - Page 5

• Manufacturer Part Number: HUF75345G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75345G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 275nC @ 20V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 325W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 325000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
-80
-80
PULSE DURATION = 80µs, V
DUTY CYCLE = 0.5% MAX
I
D
= 250µA
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
-40
-40
T
T
J
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
40
GS
HUF75345G3, HUF75345P3, HUF75345S3S
= 10V, I
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
80
10
8
6
4
2
0
0
D
120
120
(Continued)
V
= 75A
DD
o
o
C)
C)
= 30V
160
160
25
200
200
Q
g
, GATE CHARGE (nC)
50
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
75
WAVEFORMS IN
DESCENDING ORDER:
4000
3000
2000
1000
7000
6000
5000
I
I
I
I
0.6
1.2
1.0
0.8
0.4
D
D
D
D
0
-80
0
= 75A
= 55A
= 35A
= 20A
100
JUNCTION TEMPERATURE
-40
10
V
C
C
DS
T
C
OSS
RSS
J
ISS
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
125
0
20
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2
40
30
80
V
GS
V
C
C
C
40
= V
GS
ISS
RSS
OSS
120
DS
= 0V, f = 1MHz
= C
o
= C
≈ C
C)
, I
GS
D
GD
50
DS
160
= 250µA
+ C
+ C
GD
GD
200
60