HUF75345G3 Fairchild Semiconductor, HUF75345G3 Datasheet - Page 3

MOSFET N-CH 55V 75A TO-247

HUF75345G3

Manufacturer Part Number
HUF75345G3
Description
MOSFET N-CH 55V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75345G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
275nC @ 20V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
325W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
325000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75345G3
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2009 Fairchild Semiconductor Corporation
Electrical Specifications
Source to Drain Diode Specifications
Typical Performance Curves
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
2
1
10
-5
TEMPERATURE
PARAMETER
25
PARAMETER
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
50
, CASE TEMPERATURE (
SINGLE PULSE
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
-4
C
HUF75345G3, HUF75345P3, HUF75345S3S
= 25
100
o
C, Unless Otherwise Specified (Continued)
125
SYMBOL
o
SYMBOL
C)
C
C
C
Q
OSS
V
RSS
ISS
t
SD
RR
rr
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
V
f = 1MHz
(Figure 12)
I
I
I
SD
SD
SD
DS
175
= 25V, V
= 75A
= 75A, dI
= 75A, dI
TEST CONDITIONS
TEST CONDITIONS
GS
SD
SD
10
/dt = 100A/µs
/dt = 100A/µs
-2
= 0V,
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
-1
T
C
, CASE TEMPERATURE (
75
NOTES:
DUTY FACTOR: D = t
PEAK T
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2
MIN
-
-
-
MIN
-
-
-
J
= P
100
DM
TYP
10
4000
1450
TYP
-
-
-
450
x Z
0
P
DM
θJC
125
1
/t
x R
o
2
MAX
C)
1.25
t
MAX
1
55
80
θJC
t
-
-
-
2
150
+ T
C
UNITS
UNITS
10
nC
pF
pF
pF
ns
V
1
175

Related parts for HUF75345G3