HUF75345G3 Fairchild Semiconductor, HUF75345G3 Datasheet - Page 4

• Manufacturer Part Number: HUF75345G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75345G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 275nC @ 20V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 325W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 325000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
150
120
1000
90
60
30
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
0
10
1
0
2000
1000
100
1
FIGURE 7. SATURATION CHARACTERISTICS
50
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
10
DSS(MAX)
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
V
DS
DS
V
1
GS
= 55V
V
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS(ON)
= 10V
= 20V
V
V
V
V
10
GS
GS
10
GS
GS
-4
= 7V
= 6V
= 20V
= 10V
2
HUF75345G3, HUF75345P3, HUF75345S3S
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
T
T
(Continued)
o
J
C
C
= MAX RATED
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
3
100µs
1ms
10ms
10
o
C
V
100
-3
GS
= 5V
200
4
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
1000
100
150
120
10
90
60
30
0
0.01
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
FIGURE 8. TRANSFER CHARACTERISTICS
= (L)(I
= (L/R)ln[(I
T
C
1.5
10
AS
V
= 25
GS
-1
0.1
)/(1.3*RATED BV
t
J
AV
, GATE TO SOURCE VOLTAGE (V)
AS
o
= 150
C
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
175
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2
o
25
o
C
3.0
C
o
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
1
STARTING T
DSS
25
-55
10
- V
4.5
o
0
o
C DERATE PEAK
DD
DSS
C
175 - T
)
150
- V
J
= 25
DD
10
C
) +1]
6.0
o
V
C
DD
= 15V
10
1
100
7.5