IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFPS40N50LPBF
• Description: MOSFET N-CH 500V 46A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS40N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPS40N50LPBF

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Note
a. R
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  400 μs; duty cycle  2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
C
DS
th
oss
oss
Temperature Coefficient
is measured at T
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy as C
J
approximately 90 °C.
J
= 25 °C, unless otherwise noted)
a
a
a
C
SYMBOL
SYMBOL
oss eff.
V
C
R
V
oss
R
R
t
t
I
R
I
C
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
RRM
GSS
DSS
g
Q
R
Q
DS
t
SM
I
t
thCS
thJA
thJC
oss
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
G
r
f
rr
g
eff.
/T
(ER)
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
V
GS
GS
GS
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
T
Reference to 25 °C, I
T
T
J
J
= 10 V
= 10 V
= 0 V
J
J
= 400 V, V
= 25 °C, I
= 25 °C, I
R
= 125 °C, dI/dt = 100 A/μs
= 125 °C, dI/dt = 100 A/μs
V
V
V
V
f = 1.0 MHz, see fig. 5
f = 1 MHz, open drain
G
oss
see fig. 14a and 14b
TYP.
V
TEST CONDITIONS
0.24
T
DS
DS
DD
GS
oss
DS
= 0.85 , V
J
-
-
while V
= 25 °C, I
= 500 V, V
= V
= 250 V, I
= 0 V, I
V
while V
= 50 V, I
V
T
GS
V
V
DS
V
S
S
J
GS
GS
GS
DS
I
DS
D
= 25 °C
= 46 A, V
= 46 A, V
= ± 30 V
V
, I
= 25 V,
= 46 A, V
= 0 V,
see fig. 7 and 15
DS
= 400 V , f = 1.0 MHz
= 0 V, T
DS
= 1.0 V , f = 1.0 MHz
D
D
DS
= 250 μA
D
F
= 250 μA
GS
D
is rising from 0 % to 80 % V
= 0 V to 400 V
GS
I
= 46 A
is rising from 0 % to 80 % V
D
= 46 A
= 46 A,
= 10 V,
= 28 A
D
= 0 V
GS
GS
J
= 1 mA
DS
= 125 °C
G
b
= 0 V
= 0 V
= 400 V,
b
b
b
b
b
MAX.
b
0.23
D
S
c
40
-
MIN.
500
3.0
21
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0111-Rev. C, 07-Feb-11
DS
DS
Document Number: 91260
.
11200
0.087
TYP.
8110
0.60
0.90
.
960
130
240
440
310
170
170
220
705
1.3
9.0
27
50
69
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.100
1060
380
190
180
250
330
5.0
2.0
1.5
2.0
S
50
80
46
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
mA
)
nA
μA
nC
nC
pF
ns
ns


V
V
S
A
V
A