IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFPS40N50LPBF
• Description: MOSFET N-CH 500V 46A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS40N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPS40N50LPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91260
S11-0111-Rev. C, 07-Feb-11
1000
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20μs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
J
10
10
4.5V
°
4.5V
°
100
100
IRFPS40N50L, SiHFPS40N50L
1000
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
1
-60 -40 -20
4
I =
D
T = 150 C
Fig. 3 - Typical Transfer Characteristics
J
47A
5
V
T , Junction Temperature ( C)
GS
J
°
, Gate-to-Source Voltage (V)
0
6
T = 25 C
J
20 40 60 80 100 120 140 160
7
°
Vishay Siliconix
8
V
20µs PULSE WIDTH
DS
= 50V
9
V
GS
www.vishay.com
°
=
10
10V
11
3