IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 4

• Manufacturer Part Number: IRFPS40N50LPBF
• Description: MOSFET N-CH 500V 46A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS40N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPS40N50LPBF

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
www.vishay.com
4
1000000
100000
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
10000
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
40
35
30
25
20
15
10
5
0
1
0
100
V DS , Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
200
10
= C gd
300
f = 1 MHZ
Coss
Ciss
Crss
400
100
500
600
1000
DS
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
20
15
10
100
5
0
Fig. 8 - Typical Source Drain Diode Forward Voltage
0.1
10
0
1
0.2
I =
D
T = 150 C
47A
J
V
Q , Total Gate Charge (nC)
SD
100
G
°
0.7
,Source-to-Drain Voltage (V)
T = 25 C
J
200
1.2
S11-0111-Rev. C, 07-Feb-11
V
V
V
°
DS
DS
DS
Document Number: 91260
= 400V
= 250V
= 100V
300
1.7
V
GS
= 0 V
400
2.2