BSS87,115 NXP Semiconductors, BSS87,115 Datasheet

MOSFET N-CH 200V 400MA SOT-89

BSS87,115

Manufacturer Part Number
BSS87,115
Description
MOSFET N-CH 200V 400MA SOT-89
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Type
Power MOSFETr
Datasheet
1.BSS87115.pdf (8 pages)

Specifications of BSS87,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
MOSFET N-Channel, Metal Oxide
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
400mA
Drain To Source Voltage (vdss)
200V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 400mA, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.4 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933943940115::BSS87 T/R::BSS87 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSS87,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Euro Chip Distribution Euro Chip Distribution
Part Number:
BSS87,115
Quantity:
600
Product specification
Supersedes data of 1997 June 23
book, halfpage
DATA SHEET
BSS87
N-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D109
2001 May 18

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BSS87,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 M3D109 2001 May 18 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R . DSon APPLICATIONS Line current interruptor in telephone sets Applications in relay, high-speed and line transformer drivers. DESCRIPTION ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 2001 May 18 handbook, halfpage INPUT OUTPUT I D MSA631 ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 May 18 NOTES 7 Product specification BSS87 ...

Page 8

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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