BSS87,115 NXP Semiconductors, BSS87,115 Datasheet - Page 4

• Manufacturer Part Number: BSS87,115
• Description: MOSFET N-CH 200V 400MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSS87,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 400mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 400mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943940115::BSS87 T/R::BSS87 T/R

Philips Semiconductors
2001 May 18
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
V
DD
= 50 V.
10 V
0 V
Fig.2 Switching times test circuit.
50
V DD = 50 V
I D
MSA631
4
handbook, halfpage
INPUT
OUTPUT
Fig.3 Input and output waveforms.
10 %
t on
90 %
90 %
Product specification
t off
BSS87
MBB692
10 %