BSS87,115 NXP Semiconductors, BSS87,115 Datasheet - Page 2

• Manufacturer Part Number: BSS87,115
• Description: MOSFET N-CH 200V 400MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSS87,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 400mA
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 400mA, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943940115::BSS87 T/R::BSS87 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
2001 May 18
V
V
I
P
R
V
V
I
I
P
T
T
D
D
DM
y
SYMBOL
SYMBOL
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown
Low R
Line current interruptor in telephone sets
Applications in relay, high-speed and line transformer
drivers.
DS
GSO
tot
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
fs
10
DSon
10 mm
.
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance
forward transfer admittance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open drain
T
I
I
open drain
T
D
D
amb
amb
= 400 mA; V
= 400 mA; V
25 C
25 C; note 1
2
CONDITIONS
CONDITIONS
PINNING - SOT89
handbook, halfpage
GS
DS
Fig.1 Simplified outline (SOT89) and symbol.
= 10 V
= 25 V
PIN
Bottom view
1
2
3
1
2
source
drain
gate
140
3
MIN.
55
MIN.
MAM355
DESCRIPTION
1.6
750
TYP.
Product specification
g
200
400
1.6
1
+150
150
20
MAX.
200
400
1
3
MAX.
20
d
s
BSS87
V
V
mA
A
W
C
C
UNIT
V
V
mA
W
mS
UNIT