BSH108,215 NXP Semiconductors, BSH108,215 Datasheet - Page 3

• Manufacturer Part Number: BSH108,215
• Description: MOSFET N-CH 30V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH108,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055571215::BSH108 T/R::BSH108 T/R

Philips Semiconductors
9397 750 07652
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
=
(%)
der
120
100
80
60
40
20
----------------------
P
0
tot 25 C
0
P
tot
DM
25
is single pulse.
100%
50
(A)
I D
75
P
100
t p
T
125
T sp (
=
t p
T
150
t
o
C)
03aa17
175
Rev. 02 — 25 October 2000
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of solder point temperature.
(%)
=
I der
5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
50
75
03aa80
© Philips Electronics N.V. 2000. All rights reserved.
100
125
T sp ( o C)
BSH108
150
03aa25
175
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