BSH108,215 NXP Semiconductors, BSH108,215 Datasheet - Page 5

• Manufacturer Part Number: BSH108,215
• Description: MOSFET N-CH 30V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH108,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055571215::BSH108 T/R::BSH108 T/R

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07652
Product specification
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
g(tot)
gs
gd
iss
oss
rss
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
V
V
V
I
V
D
D
S
S
DS
GS
GS
GS
DS
DD
GS
DD
DS
Rev. 02 — 25 October 2000
T
T
T
T
T
T
T
T
T
T
= 0.83 A; V
= 1 A; dI
= 10 A; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
j
= 24 V; V
= 10 V; I
= 25 V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 10 V; V
= 10 V; I
= 25 C
= 5 V; I
= 25 C
= 150 C
= 15 V; V
= 0 V; V
= 10 V; R
S
D
/dt = 100 A/ s; V
DS
DS
D
D
GS
= 1 A;
GS
GS
GS
L
N-channel enhancement mode field-effect transistor
= 1 A;
= 1 A;
DS
= V
= 10 ; V
= 10 V; f = 1 MHz;
= 0 V
= 0 V;
= 0 V
= 10 V; I
= 0 V
GS
Figure 7
Figure 11
;
Figure 7
Figure 9
Figure 13
GS
D
= 5 A;
= 10 V; R
and
GS
and
= 0 V;
8
Figure 14
Figure 12
8
G
= 6
© Philips Electronics N.V. 2000. All rights reserved.
Min
30
27
1
0.5
2
BSH108
Typ
40
1.5
0.01
10
77
102
170
4.5
6.4
0.5
1.3
190
70
50
3
8
15
26
0.8
25
20
Max
2
3.2
1.0
10
100
120
140
240
10
1.2
5 of 13
Unit
V
V
V
V
V
nA
m
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A