PMZ390UN,315 NXP Semiconductors, PMZ390UN,315 Datasheet - Page 2

• Manufacturer Part Number: PMZ390UN,315
• Description: MOSFET N-CH 30V 1.78A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ390UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.78A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.78 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060156315; PMZ390UN T/R; PMZ390UN T/R

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMZ390UN_1
Product data sheet
Type number
PMZ390UN
CAUTION
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
esd
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
electrostatic discharge voltage
Ordering information
Limiting values
Package
Name
SC-101
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or
equivalent standards.
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
Conditions
25 C
25 C
T
T
T
T
T
T
all pins
mb
mb
mb
mb
mb
mb
human body model; C = 100 pF; R = 1.5 k
machine model; C = 200 pF
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
Rev. 01 — 12 July 2007
0.6
T
T
j
j
150 C
150 C; R
0.5 mm
GS
GS
Figure 1
= 10 V; see
= 10 V; see
p
p
GS
10 s; see
10 s
= 20 k
Figure 2
N-channel TrenchMOS standard level FET
Figure 2
Figure 3
and
3
PMZ390UN
Min
-
-
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2007. All rights reserved.
Max
30
30
1.78
1.13
3.56
2.50
+150
+150
1.78
3.56
60
30
Version
SOT883
8
2 of 13
Unit
V
V
V
A
A
A
W
A
A
V
V
C
C